Mfg Part Number: 1N4606 | NSN : 5961-00-403-5429 | NIIN : 004035429 |
CAGE Code : 31637 | Manufacturer: Bae Systems Information And Electronic Systems Integration I Div Microwave Elect | Item Name : Semiconductor Device Diode |
FSC : 5961 Semiconductor Devices and Associated Hardware |
ASAP Integrated Distribution is a purchasing platform owned and operated by ASAP Semiconductor, and we are your sourcing solution for 1N4606 Semiconductor Device Diode NSN parts with NSN 5961-00-403-5429. This 1N4606 NSN product is manufactured by Bae Systems Information And Electronic Systems Integration I Div Microwave Elect. If you are interested in this item and would like to kickstart the procurement process with a quote for your comparisons, complete and submit the form provided below at your earliest convenience. Once we receive a form, a dedicated account manager will rapidly formulate a customized solution and personally reach out to you within 15 minutes or less.
To ensure that customers only purchase the exact parts that they require, we list items with all applicable information. For example, NSN 5961-00-403-5429 was specifically produced under the CAGE Code 31637, denoting the specific Bae Systems Information And Electronic Systems Integration I Div Microwave Elect facility that its production traces back to. Additionally, we conduct extensive document verification, ensuring that our offerings are traceable, up to required standards, and more. With our steadfast dedication to quality control and compliance, we operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Kickstart the procurement process for the NSN parts you need with an RFQ, and we will do the rest for you!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-00-403-5429 Item Description: Semiconductor Device Diode | 5961 | 004035429 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | U | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1n4606 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
DIODE | ABBH | INCLOSURE MATERIALGLASS |
DIODE | ABHP | OVERALL LENGTH0 120 INCHES MINIMUM AND 0 200 INCHES MAXIMUM |
DIODE | ABJT | TERMINAL LENGTH0 500 INCHES MINIMUM |
DIODE | ADAV | OVERALL DIAMETER0 060 INCHES MINIMUM AND 0 090 INCHES MAXIMUM |
DIODE | ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCILJEDECCASE OUTLINE DESIGNATIONDO-35 |
DIODE | AXGY | MOUNTING METHODTERMINAL |
DIODE | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED CASE |
DIODE | CTMZ | SEMICONDUCTOR MATERIALSILICON |
DIODE | CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC85 0 MAXIMUM REVERSE VOLTAGE PEAK |
DIODE | CTQX | CURRENT RATING PER CHARACTERISTIC10 00 MILLIAMPERES MAXIMUM FORWARD CURRENT DC |
DIODE | CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100 0 DEG CELSIUS AMBIENT AIR |
DIODE | TTQY | TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD |
DIODE | ZZZK | SPECIFICATIONSTANDARD DATA80131-RELEASE4999 PROFESSIONALINDUSTRIAL ASSOCIATION SPECIFICATION |
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