Receive 701729 NSN Part by Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-185-9614

ASAP Integrated Distribution is a purchasing platform owned and operated by ASAP Semiconductor, and we are your sourcing solution for 701729 Microcircuit Memory NSN parts with NSN 5962-01-185-9614. This 701729 NSN product is manufactured by Bae Systems Information And Electronic Systems Integration Inc. If you are interested in this item and would like to kickstart the procurement process with a quote for your comparisons, complete and submit the form provided below at your earliest convenience. Once we receive a form, a dedicated account manager will rapidly formulate a customized solution and personally reach out to you within 15 minutes or less.

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To ensure that customers only purchase the exact parts that they require, we list items with all applicable information. For example, NSN 5962-01-185-9614 was specifically produced under the CAGE Code 80249, denoting the specific Bae Systems Information And Electronic Systems Integration Inc facility that its production traces back to. Additionally, we conduct extensive document verification, ensuring that our offerings are traceable, up to required standards, and more. With our steadfast dedication to quality control and compliance, we operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Kickstart the procurement process for the NSN parts you need with an RFQ, and we will do the rest for you!

NSN Information for Part Number 701729 with NSN 5962-01-185-9614, 5962011859614

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-185-9614

Item Description:

Microcircuit Memory

59620118596140NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
701729215

Characteristics Data of NSN 5962-01-185-9614, 5962011859614

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH1 290 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 210 INCHES NOMINAL
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 02 WATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATIONRADAR SYSTEM ANFPS-117
MEMORYCBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
MEMORYCQSJINCLOSURE MATERIALCERAMIC AND GLASS
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN14 INPUT
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEROM
MEMORYCZZZMEMORY CAPACITYUNKNOWN
MEMORYTTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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