Mfg Part Number: BZX84-B30 | Alternate P/N: BZX84B30 | NSN : 5961-01-514-5445 |
NIIN : 015145445 | CAGE Code : 0LUA3 | Manufacturer: Philips Components Ltd |
Item Name : Semiconductor Device Diode | FSC : 5961 Semiconductor Devices and Associated Hardware |
ASAP Integrated Distribution is a purchasing platform owned and operated by ASAP Semiconductor, and we are your sourcing solution for BZX84-B30 Semiconductor Device Diode NSN parts with NSN 5961-01-514-5445. This BZX84-B30 NSN product is manufactured by Philips Components Ltd. If you are interested in this item and would like to kickstart the procurement process with a quote for your comparisons, complete and submit the form provided below at your earliest convenience. Once we receive a form, a dedicated account manager will rapidly formulate a customized solution and personally reach out to you within 15 minutes or less.
To ensure that customers only purchase the exact parts that they require, we list items with all applicable information. For example, NSN 5961-01-514-5445 was specifically produced under the CAGE Code 0LUA3, denoting the specific Philips Components Ltd facility that its production traces back to. Additionally, we conduct extensive document verification, ensuring that our offerings are traceable, up to required standards, and more. With our steadfast dedication to quality control and compliance, we operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Kickstart the procurement process for the NSN parts you need with an RFQ, and we will do the rest for you!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-514-5445 Item Description: SEMICONDUCTOR DEVICE,DIODE | 5961 | 015145445 | N | |||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
BZX84-B30 | 5 | 9 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC" |
ABHP | OVERALL LENGTH | 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM" |
ABMK | OVERALL WIDTH | 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM" |
AXGY | MOUNTING METHOD | TERMINAL" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE" |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK" |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET" |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION" |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD" |
ABBH | INCLOSURE MATERIAL | PLASTIC" |
ABHP | OVERALL LENGTH | 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM" |
ABMK | OVERALL WIDTH | 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM" |
AXGY | MOUNTING METHOD | TERMINAL" |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE" |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0" |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 NANOAMPERES FORWARD CURRENT, AVERAGE PEAK" |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET" |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION" |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD" |
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