Receive P4C1981-25CMB M0296 NSN Part by Pyramid Semiconductor Corp with NSN 5962-01-359-0333

Mfg Part Number: P4C1981-25CMB M0296	Alternate P/N: P4C198125CMBM0296	NSN : 5962-01-359-0333
NIIN : 013590333	CAGE Code : 3DTT2	Manufacturer: Pyramid Semiconductor Corp
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

ASAP Integrated Distribution is a purchasing platform owned and operated by ASAP Semiconductor, and we are your sourcing solution for P4C1981-25CMB M0296 Microcircuit Memory NSN parts with NSN 5962-01-359-0333. This P4C1981-25CMB M0296 NSN product is manufactured by Pyramid Semiconductor Corp. If you are interested in this item and would like to kickstart the procurement process with a quote for your comparisons, complete and submit the form provided below at your earliest convenience. Once we receive a form, a dedicated account manager will rapidly formulate a customized solution and personally reach out to you within 15 minutes or less.

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To ensure that customers only purchase the exact parts that they require, we list items with all applicable information. For example, NSN 5962-01-359-0333 was specifically produced under the CAGE Code 3DTT2, denoting the specific Pyramid Semiconductor Corp facility that its production traces back to. Additionally, we conduct extensive document verification, ensuring that our offerings are traceable, up to required standards, and more. With our steadfast dedication to quality control and compliance, we operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Kickstart the procurement process for the NSN parts you need with an RFQ, and we will do the rest for you!

NSN Information for Part Number P4C1981-25CMB M0296 with NSN 5962-01-359-0333, 5962013590333

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-359-0333 Item Description: Microcircuit Memory	5962	013590333	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
P4c1981-25cmb M0296	5	2	5

Characteristics Data of NSN 5962-01-359-0333, 5962013590333

MRC	Criteria	Characteristic
AEHX	MAXIMUM POWER DISSIPATION RATING	385.0 MILLIWATTS
AFGA	OPERATING TEMP RANGE	-55.0 TO 125.0 DEG CELSIUS
AFJQ	STORAGE TEMP RANGE	-65.0 TO 150.0 DEG CELSIUS
CBBL	FEATURES PROVIDED	BURN IN AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND PROGRAMMED AND MONOLITHIC
CQSJ	INCLOSURE MATERIAL	CERAMIC
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE
CQWX	OUTPUT LOGIC FORM	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CQZP	INPUT CIRCUIT PATTERN	21 INPUT
CWSG	TERMINAL SURFACE TREATMENT	SOLDER
CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC	-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CZER	MEMORY DEVICE TYPE	RAM
TTQY	TERMINAL TYPE AND QUANTITY	28 PRINTED CIRCUIT