Receive BFW10 NSN Part by Raytheon Company with NSN 5961-01-042-4149

Mfg Part Number: BFW10	NSN : 5961-01-042-4149	NIIN : 010424149
CAGE Code : 30881	Manufacturer: Raytheon Company	Item Name : Transistor
FSC : 5961 Semiconductor Devices and Associated Hardware

ASAP Integrated Distribution is a purchasing platform owned and operated by ASAP Semiconductor, and we are your sourcing solution for BFW10 Transistor NSN parts with NSN 5961-01-042-4149. This BFW10 NSN product is manufactured by Raytheon Company. If you are interested in this item and would like to kickstart the procurement process with a quote for your comparisons, complete and submit the form provided below at your earliest convenience. Once we receive a form, a dedicated account manager will rapidly formulate a customized solution and personally reach out to you within 15 minutes or less.

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To ensure that customers only purchase the exact parts that they require, we list items with all applicable information. For example, NSN 5961-01-042-4149 was specifically produced under the CAGE Code 30881, denoting the specific Raytheon Company facility that its production traces back to. Additionally, we conduct extensive document verification, ensuring that our offerings are traceable, up to required standards, and more. With our steadfast dedication to quality control and compliance, we operate with AS9120B, ISO 9001:2015, and FAA AC 00-56B accreditation. Kickstart the procurement process for the NSN parts you need with an RFQ, and we will do the rest for you!

NSN Information for Part Number BFW10 with NSN 5961-01-042-4149, 5961010424149

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5961-01-042-4149 Item Description: Transistor	5961	010424149	0	N	A
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U			U
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Bfw10	3	2	3

Characteristics Data of NSN 5961-01-042-4149, 5961010424149

MRC	Criteria	Characteristic
ABBH	INCLOSURE MATERIAL	METAL
ABHP	OVERALL LENGTH	0.210 INCHES MAXIMUM
ABJT	TERMINAL LENGTH	0.500 INCHES MINIMUM
ADAV	OVERALL DIAMETER	0.230 INCHES MAXIMUM
ALAS	INTERNAL CONFIGURATION	FIELD EFFECT
ALAZ	JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-72
AXGY	MOUNTING METHOD	TERMINAL
AYQS	TERMINAL CIRCLE DIAMETER	0.100 INCHES NOMINAL
CBBL	FEATURES PROVIDED	HERMETICALLY SEALED CASE
CTMZ	III SEMICONDUCTOR MATERIAL	SILICON
CTQN	VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CTQX	CURRENT RATING PER CHARACTERISTIC	20.00 MILLIAMPERES MAXIMUM DARK CURRENT AND 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
CTRD	POWER RATING PER CHARACTERISTIC	300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
TTQY	TERMINAL TYPE AND QUANTITY	4 UNINSULATED WIRE LEAD